BeSang in News
3D chip for the inevitable road
November, 2008 (In Chinese) Link to Original Document (pdf)
November, 2008 (In Chinese) Link to Original Document (pdf)
3D IC Architecture and Business Model for High-density Memories
March. 2010
Memory business models and device scaling are facing challenges due to high manufacturing
costs, a low fab return-on-investment (ROI), a limited number of read and write cycles in Flash
memories, and capacitor scaling limitations for dynamic random access .... Read More
March. 2010
Memory business models and device scaling are facing challenges due to high manufacturing
costs, a low fab return-on-investment (ROI), a limited number of read and write cycles in Flash
memories, and capacitor scaling limitations for dynamic random access .... Read More
17 startups joined the EETimes' Silicon 60
October 2009
The EE Times List of 60 Emerging Startups, first published in April 2004, has been updated to
version 9.0, highlighting the hottest new companies and technologies.....Read More
October 2009
The EE Times List of 60 Emerging Startups, first published in April 2004, has been updated to
version 9.0, highlighting the hottest new companies and technologies.....Read More
BeSang Demonstrates Multi-Layer 3D IC Technology
August 2009
BeSang Inc., a fabless semiconductor company based in Beaverton, OR, has
successfully developed a multi-layer stacked three-dimensional (3D) integrated circuit
(IC) technology. This 3D IC technology enables ultra low-cost solid-state drives
(SSD)....Read More
August 2009
BeSang Inc., a fabless semiconductor company based in Beaverton, OR, has
successfully developed a multi-layer stacked three-dimensional (3D) integrated circuit
(IC) technology. This 3D IC technology enables ultra low-cost solid-state drives
(SSD)....Read More
Frost & Sullivan tips BeSang as 3-D IC winner
March 2009
LONDON — Market research company Frost & Sullivan has written a document in praise of
BeSang Inc. (Beaverton, Oregon) a fabless semiconductor company, founded in 2003 with
strong Korean connections that is developing a 3-D integrated circuit technology.....Read More
March 2009
LONDON — Market research company Frost & Sullivan has written a document in praise of
BeSang Inc. (Beaverton, Oregon) a fabless semiconductor company, founded in 2003 with
strong Korean connections that is developing a 3-D integrated circuit technology.....Read More
EE Times updates list of emerging startups to version 8.0
February 2009
The list of EE Times 60 Emerging Startups, first published in April 2004, has been updated to
version 8.0, reflecting the latest corporate, commercial, technology and market conditions.
Twenty-three companies have been brought onto the Silicon 60....Read more.
February 2009
The list of EE Times 60 Emerging Startups, first published in April 2004, has been updated to
version 8.0, reflecting the latest corporate, commercial, technology and market conditions.
Twenty-three companies have been brought onto the Silicon 60....Read more.
BeSang, Albany NanoTech devise 3D memory
April 6, 2006
BeSang Inc., a fabless semiconductor startup, has emerged after keeping a low profile and
disclosed that it is developing a proprietary three-dimensional (3D) memory technology.
BeSang (Portland, Ore.) on Thursday (April 6) also said that it has formed a joint research
project with the College of Nanoscale Science and Engineering (CNSE) of the University at
Albany. As part of a three-year program, valued at $1.1 m....Read more
April 6, 2006
BeSang Inc., a fabless semiconductor startup, has emerged after keeping a low profile and
disclosed that it is developing a proprietary three-dimensional (3D) memory technology.
BeSang (Portland, Ore.) on Thursday (April 6) also said that it has formed a joint research
project with the College of Nanoscale Science and Engineering (CNSE) of the University at
Albany. As part of a three-year program, valued at $1.1 m....Read more
Emerging company finds home, clients at Albany NanoTech IMAGE
April 7, 2006
Now there's BeSang Inc., a four-person company based in Portland, Ore. that has only been in
business a few years. Last week, half the company opened up BeSang's East Coast R&D center
at the University at Albany after ....Read more
April 7, 2006
Now there's BeSang Inc., a four-person company based in Portland, Ore. that has only been in
business a few years. Last week, half the company opened up BeSang's East Coast R&D center
at the University at Albany after ....Read more
IP Start-Up Develops High Density Vertical Flash Memory
January 25, 2007
BeSang Inc., a fabless start-up semiconductor IP company based in Portland, OR, has
successfully demonstrated its multi-bit vertical flash memory technology. Combining a 4F2
physical memory cell area and 2-bit per cell memory technology, the flash memory has 2F2 cell
density, ....Read more
January 25, 2007
BeSang Inc., a fabless start-up semiconductor IP company based in Portland, OR, has
successfully demonstrated its multi-bit vertical flash memory technology. Combining a 4F2
physical memory cell area and 2-bit per cell memory technology, the flash memory has 2F2 cell
density, ....Read more
Radar Scope - BeSang - link to original document (pdf)
April 18, 2007 (PDF)
April 18, 2007 (PDF)
Interview with ET News IMAGE
April 18, 2007 (In Korean)
비상(BeSang)이 개발한 기술은 간단히 말하면 웨이퍼 두 장을 붙였다가 깨끗하게 떼어내는 기술입니다.
개발을 시작한 2003년만 해도 불가능하다고들 말하더니, 개발에 성공한 지금에는 쉬워보인다며 왜 개발을
안했을까라고 이야기하더군요. 벤처의 역할은 남들이 불가능하다고 할 때 시도해 보는 것이 아닐까 합니다.”
Read more
April 18, 2007 (In Korean)
비상(BeSang)이 개발한 기술은 간단히 말하면 웨이퍼 두 장을 붙였다가 깨끗하게 떼어내는 기술입니다.
개발을 시작한 2003년만 해도 불가능하다고들 말하더니, 개발에 성공한 지금에는 쉬워보인다며 왜 개발을
안했을까라고 이야기하더군요. 벤처의 역할은 남들이 불가능하다고 할 때 시도해 보는 것이 아닐까 합니다.”
Read more
Single-chip 3-D technology IMAGE
September 1, 2007
The world's first 3-D chip process is ready for licensing from the fabless semiconductor
design house BeSang Inc. BeSang fabricated demonstration chips with 128 million
vertical....Read more
September 1, 2007
The world's first 3-D chip process is ready for licensing from the fabless semiconductor
design house BeSang Inc. BeSang fabricated demonstration chips with 128 million
vertical....Read more
World First 3D IC IMAGE
August 12, 2008 (In Korean)
메모리반도체의 양산 비용을 지금의 20% 수준으로 낮출 수 있는 3차원(3D) 집적회로(IC) 상용화 기술을
국내외 연구진이 개발했다....Read more
Semicoductor Spotlight - 3D ICs - Link to original document (pdf)
August 2008
August 2008
World First 3D IC - Link to original document (pdf)
August 2008
August 2008
Stanford, Korean nanofab center, Oregon-based semi startup claim
3D computer chip breakthrough
August 2008
The 3D IC, which was processed on 8-inch wafers with industry standard 0.18-micron CMOS
technologies both at NNFC and SNF, contains 128 million vertically oriented devices as a test
vehicle, and was uniquely processed at low temperatures -- below 400 degree
Celsius......Read more
3D computer chip breakthrough
August 2008
The 3D IC, which was processed on 8-inch wafers with industry standard 0.18-micron CMOS
technologies both at NNFC and SNF, contains 128 million vertically oriented devices as a test
vehicle, and was uniquely processed at low temperatures -- below 400 degree
Celsius......Read more
Investing in the Chip Revolution
September 2008
Last year, a tiny semiconductor design startup, BeSang Inc., announced a breakthrough in 3-D
chip fabrication. Specifically, it touted a new technique for radically improving the performance
and cost-effectiveness of chips produced by conventional chip manufacturing processes....Read
more
September 2008
Last year, a tiny semiconductor design startup, BeSang Inc., announced a breakthrough in 3-D
chip fabrication. Specifically, it touted a new technique for radically improving the performance
and cost-effectiveness of chips produced by conventional chip manufacturing processes....Read
more
3D technology enables low-cost, high-performance ICs
August 2008
BeSang (Beaverton, OR), a semiconductor company, National NanoFab Center (NNFC), a
nanotechnology laboratory, (Daejeon, Korea) and Stanford NanoFab (SNF) (Palo Alto, CA, a
state-of-the-art, shared-equipment laboratory open to academic, industrial, and governmental
researchers, have developed a breakthrough three-dimensional IC technology promising
low-cost...Read more
August 2008
BeSang (Beaverton, OR), a semiconductor company, National NanoFab Center (NNFC), a
nanotechnology laboratory, (Daejeon, Korea) and Stanford NanoFab (SNF) (Palo Alto, CA, a
state-of-the-art, shared-equipment laboratory open to academic, industrial, and governmental
researchers, have developed a breakthrough three-dimensional IC technology promising
low-cost...Read more
October 2008 Link to Original Document (pdf)
The most recent 3D process, 3D silicon, was jointly announced on August 11th by BeSang, Inc.,
South Korea’s National Nanofab Center, and Stanford University Nanofab Center. This process
creates a layer of active devices on a single silicon wafer, by stacking a processed silicon
device...Read more
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November 2009
BeSang Inc. featured in Private Showing of GSA Forum
Jun. 2011
BeSang Inc. is a pioneer in the design, development and delivery of unsurpassed
three-dimensional (3D) IC solutions, providing unmatched process and design technologies
for 3D IC as well as technology licenses to customers. The company's propriet .... Read More
Jun. 2011
BeSang Inc. is a pioneer in the design, development and delivery of unsurpassed
three-dimensional (3D) IC solutions, providing unmatched process and design technologies
for 3D IC as well as technology licenses to customers. The company's propriet .... Read More