3D Super Memories
Ultra-Low Cost NAND and DRAM
Our Story
BeSang Inc. is the FIRST and ONLY company which successfully implemented monolithic 3D IC in the semiconductor industry, and is continuously developing next generation 3D IC technologies based on monolithic and hybrid bonding methods.
View the coverage on EE Times: https://lnkd.in/gMFpSrz
We are a PIONEER in 3-dimensional flash memory, and the FIRST company which implemented CuA (CMOS under Array) flash memory in the industry. Other NAND companies just follow.
We are the FIRST and ONLY company that provide 3D DRAM technologies with real data in the semiconductor industry. Others are in conceptual or blueprint stages.
We are preparing for our own 3D NOR design and products - creating a new paradigm in main and storage memory hierarchy. Eventually, it will replace 3D XPoint with 3D NAND price.
Using a combination of vertical GAA (Gate All Around) transistors and M3D (Monolitic 3D) IC, BeSang's 3D Super Memories achieve high-density at ultra-low costs.
"With BeSang's monolithic 3D IC solution, the industry will no longer need to rely on reducing device dimensions for achieving miniaturization"
Frost & Sullivan's Technical Insights on Growth Opportunities in the Semiconductor Sector
"Prior to BeSang's design, all the previous attempts were pseudo 3D IC"
Prof. Simon M. Sze, author of "Physics of Semiconductor Devices"
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