3D Super-eDRAM | BesangInc.

High density DRAM cell array on top of high-performance logic wafer

100x more eDRAM memories compared to SRAM
10x less standby leakage current compared to SRAM
75% less active power consumption at memory sub-system
It is ultra-fast compared to stand-alone DRAM

3D SUPER-EDRAM WILL CHANGE THE RULE OF THE GAME IN ON-CHIP MEMORY AND THE MEMORY SUB-SYSTEM

100x more embedded memories

Instead of 10MB SRAM, 1GB eDRAM could be installed at the same SRAM cache area. What will you do with such large amount of embedded memories? It will significantly boost performance of CPU, GPU, DSP, and SoC. You probably don't need external DRAM for mobile devices

Cut out standby leakage current

Unlike high density SRAM which has significantly large standby leakage current, 3D Super-eDRAM has minimized (i.e. 10x less) standby leakage current thanks to vertical GAA transistor.

75% Reduced Power Consumption

It eliminates all delay components between CPU and stand-laone DRAM. So, it could drastically reduce active power consumption at memory sub-system

No delay between CPU and DRAM

High-density embedded DRAM must be suitable for high performance CPU/DSP/GPU/SoC and also mobile applications, such as AP.

Monolithic 3D IC
Opportunities, Challenges, and TRUE 3D IC

Device scaling faces it limitation. No cost advantage could be expected from device scaling any more. So, 3D IC seems the only option for the semiconductor industry. However, it is not possible to implement "Logic IC on top of Logic IC" Instead "memory of top of Logic IC" provides significant cost and performance advantages.