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Why 3D Super Memories?
ITRS (The International Technology Roadmap for Semiconductor) in 2016 and IRDS (International Roadmap for Devices and Systems) in 2017 stated that GAA (Gate All Around) transistor is needed in order to replace FinFET and M3D (Monolithic 3D) IC is also needed in order to justify manufacturing cost.
GAA - Ideal Transistor
High Density and High Performance
GAA transistor has a surrounding gate which controls the current flow of transistors in all directions. Thus, it minimizes leakage current. Additionally, vertical GAA has the smallest geometry (i.e. 4F2) and is flexible to extend channel length to minimize S/D leakage current.
M3D - Ideal Integrated Circuit
The purpose of M3D is to drastically reduce cost in order to justify manufacturing cost using just few process steps. Also M3D should not cause any process incompatibility with other device layers. BeSang is the first and only company which enables M3D IC for various applications, such as NAND, DRAM, NOR, eDRAM, image sensor, and etc.
BESANG INTRODUCED "GAA + M3D" FOR THE FIRST TIME IN THE INDUSTRY IN 2007
Semiconductor International featured BeSang's technology
It was developed at Albany NanoTech and Stanford NanoFab, and later transferred to National NanoFab Center to complete prototype. It was a huge success!
"GAA + M3D" is the best way to implement ultra-low cost memory devices
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