3D Super-DRAM | BesangInc.

ONLY available 3D DRAM technology in the semiconductor industry.
Memory cells along with vertical GAA on top of memory periphery logic

More Die per Wafer
400% More

Cells on top of memory logic. Therefore, die size becomes smaller which leads to more die per wafer

Vertical Expansion
More Cells Vertically

Planar DRAM faces scaling limitation. So, it should be 3D for vertical expansion.

Simple Process
Reduced Masks

Compared to planar DRAM, 3D Super-DRAM reduces mask steps.

DRAM should be 3D in order to continue cost scaling

400% MORE DIE

High density memory cells on top of memory periphery logic produces more die per wafer.

It is the only available 3D DRAM solution in the semiconductor industry.

VERTICAL EXPANSION

Planar DRAM already faces its scaling limitation. So, it should be 3D in order to provide low cost DRAM without interruption of scaling. 3D Super-DRAM is the only 3D DRAM technology in the semiconductor industry.

SIMPLE PROCESS

Less mask steps compared to planar DRAM

3D SUPER-DRAM
ULTIMATE PATH TO LOW COST PER BIT

Even though 3D NAND does not achieve low cost compared to planar NAND yet, NAND successfully transformed from planar to 3D. However, DRAM still stays in 2-dimension and faces scaling limitation mainly because of scaling of storage capacitor.

3D Super-DRAM could achieve 400% more die-per-wafer using existing storage capacitor and memory logic circuitry. It is simple and enables ultra-low cost.