3D Super-NAND | BesangInc.

High density vertical GAA memory cells on top of memory periphery logic

Cost
2 cents/GB

10 times cheaper than other 3D NANDs

Cell Density
30x Higher

Compared to other 3D NAND

Performance

2x - 3x Better

P/E speed could be enhanced by small diameter single crystalline silicon pillar

Expansion
For 20 Years

Exceptionally high memory size expansion capability

Join the 3D Super-NAND Product Development

A better choice than any other 3D NAND.

HIGH-DENSITY CELLS

Unlike other 3D NANDs which have about 80nm effective cell size (40nm diameter hole + tungsten slit area), 3D Super-NAND utilizes advanced cell size at 15nm to 20nm nodes.

ULTRA-LOW COST

Due to process architecture issues, 3D NAND may stay at around 15-20 cents per GB for a while regardless number of cell stacking. In case of 3D Super-NAND, it could easily achieve 2 cents per GB with only 5-layer.

HIGH PERFORMANCE

Single crystalline silicon with small diameter pillar has better current driving capability and high electric field for fast P/E compared to macaroni structure polysilicon channel for 3D NAND.

EXPANSION CAPABILITY

3D NAND achieves price parity with planar NAND at 64-layer. Therefore, it lost memory expansion capability with less cost competitiveness. 3D Super-NAND could last for the next 20 years with high expansion capability.

What is 3D Super-NAND?

Dr. Sang-Yun Lee, CEO of BeSang Inc., describes 3D Super-NAND including comparison with 3D NAND. Wafer processing, device issues, and memory size expansion capability are discussed.